Intel and Micron announced yesterday that the company has developed the NAND-based flash memory with 25 nanometer process technology, in which each cell has three bit (3bpc). This should lead to the industry's smallest NAND devices and the highest storage capacity. Most flash memory cells in the day can only save one (single-level cell) or two piece (multi-level cell) of data. Technology with three bits per cell is also known as triple-level cell (TLC).
This will reduce the size of the units with more than 20 percent, while capacity is maintained.Pilot production is already underway, and full production is expected to be implemented by the end of the year.
The new 64 gigabit device (8 gigabytes) to open the USB and SD-based memory products are most cost effective and has higher capacity than today. Flash memory chips can also be used internally by including consumer electronics such as mobile phones.
The pieces are designed by IM Flash Technologies, which is owned by Intel and Micron in community. They will be available in retail products such as Lexar Media and Micron
